Triyoso, D. : rechercher sur Z-Library

Campagne de collecte 15 septembre 2024 – 1 octobre 2024 C'est quoi, la collecte de fonds?

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Campagne de collecte 15 septembre 2024 – 1 octobre 2024

Z-Library est une des plus grandes bibliothèques en ligne dans le monde, avec le stockage de plus de 17,000,000 livres et plus de 84,837,000 articles. Nous encourageons l'accès libre de chacun à la littérature. Aujourd'hui (15 septembre 2024) nous faisons un appel de fonds à tous ceux qui veulent contribuer encore plus au soutien et au développement de notre projet.

Les téléchargements SANS LIMITE sont aussi (au cours de 31 jours après la date de don) disponibles pour TOUS les utilisateurs qui soient en mesure de soutenir le projet pendant la période de collecte de fonds jusqu'au 1 octobre 2024.

C'est quoi, la collecte de fonds?En savoir plus

Livres
Articles (105)
Les plus populaires
Liste
- Liste
- Tableau

1

Product Inventory Predictions at Small Medium Enterprise Using Market Basket Analysis Approach-Neural Networks

Mansur, Agus, Kuncoro, Triyoso

Journal:

Procedia Economics and Finance

Année:

2012

Langue:

english

Fichier:

PDF, 562 KB

english, 2012

2

[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2014.6.9-2014.6.12)] 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond

Togo, M., Joshi, M., Meer, H. V., Liu, Y., Yong, C., Liu, B., He, X., Wu, X., Mun, S. Y., Zhang, X., Konduparthi, D., Lian, J., Bohra, G., Tong, W. H., Xiao, C. Y., Triyoso, D., Banghart, E., Pandey,

Année:

2014

Langue:

english

Fichier:

PDF, 554 KB

english, 2014

3

Impact of Zr addition on properties of atomic layer deposited HfO[sub 2]

Triyoso, D. H., Hegde, R. I., Schaeffer, J. K., Roan, D., Tobin, P. J., Samavedam, S. B., White, B. E., Gregory, R., Wang, X.-D.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 582 KB

english, 2006

4

Development of spectral hazard maps for a proposed revision of the Indonesian Seismic Building Code

Irsyam, Masyhur, Asrurifak, M., Hendriyawan,, Budiono, Bambang, Triyoso, Wahyu, Firmanti, Anita

Journal:

Geomechanics and Geoengineering

Année:

2010

Langue:

english

Fichier:

PDF, 7.82 MB

english, 2010

5

THE SUMATRAN FAULT ZONE — FROM SOURCE TO HAZARD

NATAWIDJAJA, DANNY HILMAN, TRIYOSO, WAHYU

Journal:

Journal of Earthquake and Tsunami

Année:

2007

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2007

6

(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)

Triyoso, D., Carter, R., Kluth, J., Luning, S., Child, A., Wahl, J., Mulfinger, B., Punchihewa, K., Kumar, A., Kang, L., Sporer, R., Chen, X., Straub, S., Bohra, G., Patil, S., Zhang, X., Chen, A., To

Journal:

ECS Transactions

Année:

2015

Langue:

english

Fichier:

PDF, 384 KB

english, 2015

7

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs

Rana, U., Brunco, D. P., Raman, S., Triyoso, D.H., Stoker, M.W., Johnson, J. B., Pantisano, L., Seo, K. D., Zhao, M., Reznicek, A., Krishnan, R., Moser, B., Freeman, J., Jang, L., Kaganer, E.

Année:

2019

Fichier:

PDF, 470 KB

2019

8

Impact of titanium addition on film characteristics of HfO[sub 2] gate dielectrics deposited by atomic layer deposition

Triyoso, D. H., Hegde, R. I., Zollner, S., Ramon, M. E., Kalpat, S., Gregory, R., Wang, X.-D., Jiang, J., Raymond, M., Rai, R., Werho, D., Roan, D., White, B. E., Tobin, P. J.

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 785 KB

english, 2005

9

Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect

G. Lucovsky, C. Fulton, Y. Zhang, Y. Zou, J. Luning, L. Edge, J. Whitten, R. Nemanich, H. Ade, D. Schlom, V. Afanase'v, A. Stesmans, S. Zollner, D. Triyoso, B. Rogers

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 730 KB

english, 2005

10

[IEEE 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD) - Grenoble, France (2012.09.24-2012.09.26)] 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - Impact of process parameters of TiN cap formation on threshold voltage and gate leakage in HKMG last integration

Erben, E., Hempel, K., Triyoso, D. H., Zhang, H., Metzger, J., Binder, R., Prindle, C., Carter, R., Wei, A.

Année:

2012

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2012

11

Characteristics of atomic-layer-deposited thin Hf[sub x]Zr[sub 1−x]O[sub 2] gate dielectrics

Triyoso, D. H., Hegde, R. I., Schaeffer, J. K., Gregory, R., Wang, X.-D., Canonico, M., Roan, D., Hebert, E. A., Kim, K., Jiang, J., Rai, R., Kaushik, V., Samavedam, S. B., Rochat, N.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2007

Langue:

english

Fichier:

PDF, 1.37 MB

english, 2007

12

[IEEE 2004 International Conference on Integrated Circuit Design and Technology - Austin, TX, USA (17-20 May 2004)] 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) - Threshold voltage instability and plasma induced damage of polySi/HfO/sub 2/ devices - positive impact of deuterium incorporation

Tseng, H.-H., Ramon, M.E., Hebert, L., Tobin, P.J., Triyoso, D., Kalpat, S., Grant, J.M., Jiang, Z.X., Gilmer, D.C., Menke, D., Taylor, W.J., Adetutu, O., White, B.E.

Année:

2004

Langue:

english

Fichier:

PDF, 279 KB

english, 2004

13

Compatibility of polycrystalline silicon gate deposition with HfO[sub 2] and Al[sub 2]O[sub 3]/HfO[sub 2] gate dielectrics

Gilmer, D. C., Hegde, R., Cotton, R., Garcia, R., Dhandapani, V., Triyoso, D., Roan, D., Franke, A., Rai, R., Prabhu, L., Hobbs, C., Grant, J. M., La, L., Samavedam, S., Taylor, B., Tseng, H., Tobin,

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 448 KB

english, 2002

14

Hafnium zirconate gate dielectric for advanced gate stack applications

Hegde, R. I., Triyoso, D. H., Samavedam, S. B., White, B. E.

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2007

15

[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - Fermi level pinning at the polySi/metal oxide interface

Hobbs, C., Fonseca, L., Dhandapani, V., Samavedam, S., Taylor, B., Grant, J., Dip, L., Triyoso, D., Hegde, R., Gilmer, D., Garcia, R., Roan, D., Lovejoy, L., Rai, R., Hebert, L., Tseng, H., White, B.,

Année:

2003

Langue:

english

Fichier:

PDF, 219 KB

english, 2003

16

[IEEE 2004 International Conference on Integrated Circuit Design and Technology - Austin, TX, USA (17-20 May 2004)] 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) - Integration challenges of new materials and device architectures for IC applications

Bich-Yen Nguyen,, Thean, A., White, T., Vandooren, A., Sadaka, M., Mathew, L., Barr, A., Thomas, S., Zalava, M., Da Zhang,, Eades, D., Zhong-Hai Shi,, Schaeffer, J., Triyoso, D., Samavedam, S., Var

Année:

2004

Langue:

english

Fichier:

PDF, 577 KB

english, 2004

17

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling

Togo, M., Tong, W. H., Zhang, X., Triyoso, D. H., Lian, J., Randriamihja, Y. Mamy, Uppal, S., Dag, S., Silva, E. C., Kota, M., Shimizu, T., Patil, S., Eller, M., Samavedam, S.

Année:

2016

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2016

18

[IEEE 2016 International Conference on IC Design and Technology (ICICDT) - Ho Chi Minh, Vietnam (2016.6.27-2016.6.29)] 2016 International Conference on IC Design and Technology (ICICDT) - Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges

Triyoso, D.H., Carter, R., Kluth, J., Hempel, K., Gribelyuk, M., Kang, L., Kumar, A., Mulfinger, B., Javorka, P., Punchihewa, K., Child, A., McArdle, T., Holt, J., Straub, S., Sporer, R., Chen, P.

Année:

2016

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2016

19

Hypocenter Relocation of Earthquake Swarm in West Halmahera, North Molucca Region, Indonesia by using Double-Difference Method and 3D Seismic Velocity Structure

Dian Nugraha, Andri, Ash Shiddiqi, Hasbi, Widiyantoro, Sri, Puspito, Nanang T, Triyoso, Wahyu, Wiyono, Samsul, Daryono,, Wandono,, Rosalia, Shindy

Journal:

IOP Conference Series Earth and Environmental Science

Année:

2017

Langue:

english

Fichier:

PDF, 777 KB

english, 2017

20

Preliminary Result of Hypocenter Relocation Using Double Difference Method along Sumatran Fault, Indonesia

Surya Putra, Ade, Dian Nugraha, Andri, Puspito, Nanang T, Triyoso, Wahyu

Journal:

IOP Conference Series: Earth and Environmental Science

Année:

2019

Langue:

english

Fichier:

PDF, 3.80 MB

english, 2019

21

Development of the 2017 national seismic hazard maps of Indonesia

Irsyam, Masyhur, Cummins, Phil R, Asrurifak, M, Faizal, Lutfi, Natawidjaja, Danny Hilman, Widiyantoro, Sri, Meilano, Irwan, Triyoso, Wahyu, Rudiyanto, Ariska, Hidayati, Sri, Ridwan, M, Hanifa, Nuraini

Journal:

Earthquake Spectra

Année:

2020

Fichier:

PDF, 11.62 MB

2020

22

Characterization of HfO2 dielectric films with low energy SIMS

Z.X. Jiang, K. Kim, J. Lerma, D. Sieloff, H. Tseng, R.I. Hegde, T.Y. Luo, J.Y. Yang, D.H. Triyoso, P.J. Tobin

Journal:

Applied Surface Science

Année:

2006

Langue:

english

Fichier:

PDF, 230 KB

english, 2006

23

X-ray metrology for high-k atomic layer deposited HfxZr1−xO2 films

Jesus J. Gallegos III, Dina H. Triyoso, Mark Raymond

Journal:

Microelectronic Engineering

Année:

2008

Langue:

english

Fichier:

PDF, 642 KB

english, 2008

24

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

G. Lucovsky, Y. Zhang, J. Luning, V.V. Afanase’v, A. Stesmans, S. Zollner, D. Triyoso, B.R. Rogers, J.L. Whitten

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 319 KB

english, 2005

25

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxides

J.K. Schaeffer, D.C. Gilmer, C. Capasso, S. Kalpat, B. Taylor, M.V. Raymond, D. Triyoso, R. Hegde, S.B. Samavedam, B.E. White Jr

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 1.47 MB

english, 2007

26

Characteristics of thin lanthanum lutetium oxide high-k dielectrics

Dina H. Triyoso, David C. Gilmer, Jack Jiang, Ravi Droopad

Journal:

Microelectronic Engineering

Année:

2008

Langue:

english

Fichier:

PDF, 671 KB

english, 2008

27

Compatibility of silicon gates with hafnium-based gate dielectrics

D.C. Gilmer, R. Hegde, R. Cotton, J. Smith, L. Dip, R. Garcia, V. Dhandapani, D. Triyoso, D. Roan, A. Franke, R. Rai, L. Prabhu, C. Hobbs, J.M. Grant, L. La, S. Samavedam, B. Taylor, H. Tseng, P. Tobi

Journal:

Microelectronic Engineering

Année:

2003

Langue:

english

Fichier:

PDF, 429 KB

english, 2003

28

Crystallization in hafnia- and zirconia-based systems

S. V. Ushakov, A. Navrotsky, Y. Yang, S. Stemmer, K. Kukli, M. Ritala, M. A. Leskelä, P. Fejes, A. Demkov, C. Wang, B.-Y. Nguyen, D. Triyoso, P. Tobin

Journal:

physica status solidi (b)

Année:

2004

Langue:

english

Fichier:

PDF, 899 KB

english, 2004

29

Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films

Z. X. Jiang, K. Kim, D. D. Sieloff, T. Y. Luo, A. Varghese, D. H. Triyoso, T. Guenther, B. Robichaud, J. Benavides

Journal:

Surface and Interface Analysis

Année:

2008

Langue:

english

Fichier:

PDF, 266 KB

english, 2008

30

Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

Kimberly G. Reid, Anthony Dip, Sadao Sasaki, Dina Triyoso, Sri Samavedam, David Gilmer, Carolyn F.H. Gondran

Journal:

Thin Solid Films

Année:

2009

Langue:

english

Fichier:

PDF, 1.66 MB

english, 2009

31

Pulsatile shear stress leads to DNA fragmentation in human SH-SY5Y neuroblastoma cell line

Dina H. Triyoso, Theresa A. Good

Journal:

The Journal of Physiology

Année:

1999

Langue:

english

Fichier:

PDF, 401 KB

english, 1999

32

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R

Journal:

IEEE Transactions on Electron Devices

Année:

2004

Langue:

english

Fichier:

PDF, 317 KB

english, 2004

33

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R

Journal:

IEEE Transactions on Electron Devices

Année:

2004

Langue:

english

Fichier:

PDF, 267 KB

english, 2004

34

Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement

Tseng Hsing-Huang, Tobin, P.J., Kalpat, S., Schaeffer, J.K., Ramon, M.E., Fonseca, L.R.C., Jiang, Z.X., Hegde, R.I., Triyoso, D.H., Semavedam, S.

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2007

35

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Triyoso, D., Liu, R., Roan, D., Ramon, M., Edwards, N. V., Gregory, R., Werho, D., Kulik, J., Tam, G., Irwin, E., Wang, X.-D., La, L. B., Hobbs, C., Garcia, R., Baker, J., White, B. E., Tobin, P.

Journal:

Journal of The Electrochemical Society

Année:

2004

Langue:

english

Fichier:

PDF, 811 KB

english, 2004

36

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

Samavedam, S.B., La, L.B., Tobin, P.J., White, B., Hobbs, C., Fonseca, L.R.C., Demkov, A.A., Schaeffer, J., Luckowski, E., Martinez, A., Raymond, M., Triyoso, D., Roan, D., Dhandapani, V., Garcia, R.,

Année:

2003

Langue:

english

Fichier:

PDF, 230 KB

english, 2003

37

[IEEE 2013 International Conference on IC Design & Technology (ICICDT) - Pavia, Italy (2013.05.29-2013.05.31)] Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) - Impact of precursors choice on characteristics of PEALD SiN for spacer applications

Triyoso, D.H., Hempel, K., Ohsiek, S., Shu, J., Schaeffer, J.K., Lenski, M.

Année:

2013

Langue:

english

Fichier:

PDF, 372 KB

english, 2013

38

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

Tseng, H.-H., Capasso, C.C., Schaeffer, J.K., Hebert, E.A., Tobin, P.J., Gilmer, D.C., Triyoso, D., Ramon, M.E., Kalpat, S., Luckowski, E., Taylor, W.J., Jeon, Y., Adetutu, O., Hegde, R.I., Noble, R.,

Année:

2004

Langue:

english

Fichier:

PDF, 273 KB

english, 2004

39

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability

Tseng, H.-H., Ramon, M.E., Hebert, L., Tobin, P.J., Triyoso, D., Grant, J.M., Jiang, Z.X., Roan, D., Samavedam, S.B., Gilmer, D.C., Kalpat, S., Hobbs, C., Taylor, W.J., Adetutu, O., White, B.E.

Année:

2003

Langue:

english

Fichier:

PDF, 230 KB

english, 2003

40

Film properties of ALD HfO[sub 2] and La[sub 2]O[sub 3] gate dielectrics grown on Si with various pre-deposition treatments

Triyoso, D. H., Hegde, R. I., Grant, J., Fejes, P., Liu, R., Roan, D., Ramon, M., Werho, D., Rai, R., La, L. B., Baker, J., Garza, C., Guenther, T., White, B. E., Tobin, P. J.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2004

Langue:

english

Fichier:

PDF, 750 KB

english, 2004

41

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS

Taylor, W. J., Capasso, C., Min, B., Winstead, B., Verret, E., Loiko, K., Gilmer, D., Hegde, R. I., Schaeffer, J., Luckowski, E., Martinez, A., Raymond, M., Happ, C., Triyoso, D. H., Kalpat, S., Hagga

Année:

2006

Langue:

english

Fichier:

PDF, 288 KB

english, 2006

42

[IEEE 2014 IEEE International Conference on IC Design & Technology (ICICDT) - Austin, TX, USA (2014.5.28-2014.5.30)] 2014 IEEE International Conference on IC Design & Technology - ALD ZrO2 processes for BEoL device applications

Weinreich, Wenke, Seidel, Konrad, Polakowski, Patrick, Riedel, Stefan, Wilde, Lutz, Triyoso, Dina H., Nolan, Mark G.

Année:

2014

Langue:

english

Fichier:

PDF, 897 KB

english, 2014

43

[IEEE Tutorial (ICICDT) - Grenoble, France (2008.06.2-2008.06.4)] 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial - Metal gate effects on a 32 nm metal gate resistor

Thuy Dao,, Ik_Sung Lim,, Connell, Larry, Triyoso, Dina H., Park, Youngbog, Mackenzie, Charlie

Année:

2008

Langue:

english

Fichier:

PDF, 315 KB

english, 2008

44

[IEEE 2014 IEEE International Conference on IC Design & Technology (ICICDT) - Austin, TX, USA (2014.5.28-2014.5.30)] 2014 IEEE International Conference on IC Design & Technology - ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM

Triyoso, D. H., Weinreich, W., Seidell, K., Nolan, M. G., Polakowski, P., Utess, D., Ohsiek, S., Dittmar, K., Weisheit, M., Licbau, M., Fox, R.

Année:

2014

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2014

45

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

Hegde, R.I., Triyoso, D.H., Tobin, P.J., Kalpat, S., Ramon, M.E., Tseng, H.-H., Schaeffer, J.K., Luckowski, E., Taylor, W.J., Capasso, C.C., Gilmer, D.C., Moosa, M., Haggag, A., Raymond, M., Roan, D.,

Année:

2005

Langue:

english

Fichier:

PDF, 968 KB

english, 2005

46

[IEEE 2005 IEEE VLSI-TSA. International Symposium on VLSI Technology (VLSI-TSA-TECH) - Hsinchu, Taiwan (25-27 April 2005)] IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech). - Mechanism of Gm degradation and comparison of Vt instability and reliability of HfO/sub 2/, HfSiO/sub x/ and HfAlO/sub x/ gate dielectrics with 80 nm poly-Si gate CMOS

Tseng, H.-H., Grant, J.M., Hobbs, C., Tobin, P.J., Luo, Z., Ma, T.P., Hebert, L., Ramon, M., Kalpat, S., Wang, F., Triyoso, D., Gilmer, D.C., White, B.E., Abramowitz, P., Moosa, M.

Année:

2005

Langue:

english

Fichier:

PDF, 388 KB

english, 2005

47

[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Thermo-mechanical stress characterization of tungsten-fill through-silicon-via

Dao, Thuy, Triyoso, Dina H., Mora, Rode, Kropewnicki, Tom, Griesbach, Brian, Booker, Doug, Petras, Mike, Adams, Vance

Année:

2010

Langue:

english

Fichier:

PDF, 561 KB

english, 2010

48

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes

Schaeffer, Jamie, Raymond, Mark, Gilmer, David, Gregory, Rich, Taylor, Bill, Jiang, Jack, Triyoso, Dina, Hegde, Rama, Samavedam, Sri

Année:

2008

Langue:

english

Fichier:

PDF, 792 KB

english, 2008

49

[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks

Gilmer, D.C., Schaeffer, J.K., Taylor, W.J., Spencer, G., Triyoso, D.H., Raymond, M., Roan, D., Smith, J., Capasso, C., Hegde, R.I., Samavedam, S.B.

Année:

2006

Langue:

english

Fichier:

PDF, 543 KB

english, 2006

50

Characteristics of Mixed Oxides and Nanolaminates of Atomic Layer Deposited HfO[sub 2]–TiO[sub 2] Gate Dielectrics

Triyoso, D. H., Hegde, R. I., Wang, X.-D., Stoker, M. W., Rai, R., Ramon, M. E., White, B. E., Tobin, P. J.

Journal:

Journal of The Electrochemical Society

Année:

2006

Langue:

english

Fichier:

PDF, 990 KB

english, 2006